{"id":6,"date":"2023-08-17T12:14:17","date_gmt":"2023-08-17T12:14:17","guid":{"rendered":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/?page_id=6"},"modified":"2023-10-03T11:35:39","modified_gmt":"2023-10-03T11:35:39","slug":"about","status":"publish","type":"page","link":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/","title":{"rendered":"SiGe-2H: an emerging and very promising semiconductor"},"content":{"rendered":"\n

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HEXSIGE project is funded by the Agence Nationale de la Recherche following the AAPG 2017.<\/p>\n\n\n\n

HEXSIGE departs from our pioneered observation of shear-induced phase transformation in Si and Ge nanowires (NWs) resulting in unprecedented crystal phase heterostructures. Quasi periodic 2H domains are formed with abrupt interfaces all along the <111>-oriented NWs.<\/p>\n\n\n\n

HEXSIGE is a fundamental scientific project with a twofold objective:<\/p>\n\n\n\n

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(1) understanding the mechanisms of phase transformation in Si and Ge NWs in order to optimize the synthesis of 3C\/2H superlattices.<\/p>\n\n\n\n

(2) providing a first knowledge of the basic physical properties of Ge-2H and Si-2H crystal phases and on the resulting heterostructured 3C\/2H NWs in order to identify their potential applications.<\/p>\n\n\n\n

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Centre des Nanosciences et Nanotechnologies
A joint research Unit : CNRS – Universit\u00e9 Paris-Saclay
Contact : Laetitia Vincent<\/p>\n<\/div><\/div>\n\n\n\n

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Institut des Nanotechnologies de Lyon
A joint research Unit : CNRS \u2013 INSA- Universit\u00e9 de Lyon
Contact : Nicolas Chauvin<\/p>\n<\/div><\/div>\n\n\n\n

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Laboratoire de Physique des Solides
A joint research Unit : CNRS – Universit\u00e9 Paris-Saclay
Contact : Mathieu Kociak<\/p>\n<\/div><\/div>\n\n\n\n

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Laboratoire Ondes et Mati\u00e8re d\u2019Aquitaine
A joint research Unit : CNRS – Universit\u00e9 Paris-Saclay
Contact : Stephane Grauby<\/p>\n<\/div><\/div>\n\n\n\n

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Synchrotron SOLEIL
Ligne AILES
Contact\u00a0: Jean Blaise Brubach<\/p>\n<\/div><\/div>\n","protected":false},"excerpt":{"rendered":"

HEXSIGE project is funded by the Agence Nationale de la Recherche following the AAPG 2017. HEXSIGE departs from our pioneered observation of shear-induced phase transformation in Si and Ge nanowires (NWs) resulting in unprecedented crystal phase heterostructures. Quasi periodic 2H domains are formed with abrupt interfaces all along the <111>-oriented NWs. HEXSIGE is a fundamental… Continue reading “SiGe-2H: an emerging and very promising semiconductor”<\/span><\/a><\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"_links":{"self":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages\/6"}],"collection":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=6"}],"version-history":[{"count":15,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages\/6\/revisions"}],"predecessor-version":[{"id":141,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages\/6\/revisions\/141"}],"wp:attachment":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=6"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}