{"id":60,"date":"2023-10-02T11:21:54","date_gmt":"2023-10-02T11:21:54","guid":{"rendered":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/?page_id=60"},"modified":"2023-10-02T11:30:48","modified_gmt":"2023-10-02T11:30:48","slug":"publications","status":"publish","type":"page","link":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/?page_id=60","title":{"rendered":"Publications"},"content":{"rendered":"\n

Phase transformation<\/u><\/strong><\/p>\n\n\n\n

[1] Shear-driven phase transformation in silicon nanowires<\/strong><\/p>\n\n\n\n

L. Vincent, D Djomani, M Fakhfakh, C Renard, B Belier, D Bouchier and G Patriarche, Nanotechnology 29 n\u00b012 (2018) 125601<\/p>\n\n\n\n

[2] Atypical reversed pressure-induced phase transformation in Ge nanowires<\/strong><\/p>\n\n\n\n

D. Djomani, F. Capitani, J.B. Brubach, E. Calandrini, C. Renard, D. Bouchier, J.P. Iti\u00e9, P. Roy, L. Vincent Nanotechnology 31 n\u00b023 (2020) 235711<\/p>\n\n\n\n

Theory<\/u><\/strong><\/p>\n\n\n\n

[1] Doping of III-V arsenide and phosphide wurtzite semiconductors<\/strong><\/p>\n\n\n\n

G. Giorgi, M. Amato, S. Ossicini, X. Cartoixa, E. Canadell, R. Rurali, J. Phys. Chem. C 124 (2020) 27203-27212<\/p>\n\n\n\n

[2] Extrinsic Doping in Group IV Hexagonal-Diamond-Type Crystals<\/strong><\/p>\n\n\n\n

Amato, T. Kaewmaraya, A. Zobelli, J. Phys. Chem. C 124 n\u00b031 (2020) 17290-17298<\/p>\n\n\n\n

[3] Electronic structure and optical properties of semiconductor nanowires polytypes<\/strong><\/p>\n\n\n\n

L.H.G. Tizei and M. Amato, Eur. Phys. J. B 93 (2020) 16<\/p>\n\n\n\n

[4] Ab-initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires. Role of size, passivation, symmetry and phase<\/strong><\/p>\n\n\n\n

S. Ossicini, I. Marri, M. Amato, M. Palummo, E. Canadell, R. Rurali, Faraday Discussions 222, (2020) 217-239<\/p>\n\n\n\n

[5] Preferential positioning, stability and segregation of dopants in hexagonal Si nanowires<\/strong><\/p>\n\n\n\n

M. Amato, S. Ossicini, E. Canadell and R. Rurali, Nano Lett. 19 (2019) 866<\/p>\n\n\n\n

Physical properties<\/u><\/strong><\/p>\n\n\n\n

[1] Crystalline, phononic, and electronic properties of heterostructured polytypic Ge nanowires by Raman Spectroscopy<\/strong><\/p>\n\n\n\n

C. Fasolato, M. De Luca, D. Djomani, L. Vincent, C. Renard, G. Di Iorio, V. Paillard, M. Amato, R. Rurali, I. Zardo, Nano Lett. 18 (2018) 7075-7084<\/p>\n\n\n\n

Thermal measurements<\/u><\/strong><\/p>\n\n\n\n

[1] Si and Ge allotrope heterostructured nanowires: experimental evaluation of the thermal conductivity reduction <\/strong><\/p>\n\n\n\n

A. Ben Amor, D. Djomani, M. Fakhfakh, S. Dilhaire, L. Vincent and S. Grauby, Nanotechnology 30 n\u00b037 (2019) 375704<\/p>\n\n\n\n

[2] Imaging Thermoelectric Properties at the Nanoscale. Nanomaterials<\/strong><\/p>\n\n\n\n

S. Grauby, A. Ben Amor, G. Hallais, L. Vincent, S. Dilhaire., Nanomaterials MDPI 11-5 (2021) 1199.<\/p>\n\n\n\n

Growth of SiGe-2H<\/u><\/strong><\/p>\n\n\n\n

[1] Growth-Related Formation Mechanism of I3-Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge-2H<\/strong><\/p>\n\n\n\n

L. Vincent, E. M. T. Fadaly, C. Renard, W. H. J. Peeters, M. Vettori, F. Panciera, D. Bouchier, E. P. A. M Bakkers, M. A. Verheijen, Advanced Materials Interfaces 9 -16 (2022) 2102340<\/p>\n\n\n\n

[2] Hexagonal Silicon-Germanium Nanowire Branches with Tunable Composition<\/strong><\/p>\n\n\n\n

A. Li, H.I.T. Hauge, M.A. Verheijen, and E.P.A.M. Bakkers, R.T. Tucker, L. Vincent, C. Renard, Nanotechnology 34-1 (2022) 015601<\/p>\n\n\n\n

[3] Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy<\/strong><\/p>\n\n\n\n

T. Dursap, M. Vettori, C. Botella, P. Regreny, N. Blanchard, M. Gendry, N. Chauvin , M. Bugnet, A. Danescu, J. Penuelas Nanotechnology<\/em> 32 (2021)155602 https:\/\/hal.science\/INL\/hal-02994566v1<\/a>

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Phase transformation [1] Shear-driven phase transformation in silicon nanowires L. Vincent, D Djomani, M Fakhfakh, C Renard, B Belier, D Bouchier and G Patriarche, Nanotechnology 29 n\u00b012 (2018) 125601 [2] Atypical reversed pressure-induced phase transformation in Ge nanowires D. Djomani, F. Capitani, J.B. Brubach, E. Calandrini, C. Renard, D. Bouchier, J.P. Iti\u00e9, P. Roy, L…. Continue reading “Publications”<\/span><\/a><\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"_links":{"self":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages\/60"}],"collection":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=60"}],"version-history":[{"count":2,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages\/60\/revisions"}],"predecessor-version":[{"id":71,"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=\/wp\/v2\/pages\/60\/revisions\/71"}],"wp:attachment":[{"href":"https:\/\/hexsige.c2n.universite-paris-saclay.fr\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=60"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}