SiGe-2H: an emerging and very promising semiconductor
HEXSIGE project is funded by the Agence Nationale de la Recherche following the AAPG 2017.
HEXSIGE departs from our pioneered observation of shear-induced phase transformation in Si and Ge nanowires (NWs) resulting in unprecedented crystal phase heterostructures. Quasi periodic 2H domains are formed with abrupt interfaces all along the <111>-oriented NWs.
HEXSIGE is a fundamental scientific project with a twofold objective:
(1) understanding the mechanisms of phase transformation in Si and Ge NWs in order to optimize the synthesis of 3C/2H superlattices.
(2) providing a first knowledge of the basic physical properties of Ge-2H and Si-2H crystal phases and on the resulting heterostructured 3C/2H NWs in order to identify their potential applications.
Centre des Nanosciences et Nanotechnologies
A joint research Unit : CNRS – Université Paris-Saclay
Contact : Laetitia Vincent
Institut des Nanotechnologies de Lyon
A joint research Unit : CNRS – INSA- Université de Lyon
Contact : Nicolas Chauvin
Laboratoire de Physique des Solides
A joint research Unit : CNRS – Université Paris-Saclay
Contact : Mathieu Kociak
Laboratoire Ondes et Matière d’Aquitaine
A joint research Unit : CNRS – Université Paris-Saclay
Contact : Stephane Grauby
Synchrotron SOLEIL
Ligne AILES
Contact : Jean Blaise Brubach